2SK2615(TE12L,F)
Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) PW-Mini T/R
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Part Number : 2SK2615(TE12L,F)
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Package/Case : PW-Mini
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Brands : TOSHIBA
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Components Categories : Small Signal Field-Effect Transistors
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Datesheet : 2SK2615(TE12L,F) DataSheet (PDF)
Overview of 2SK2615(TE12L,F)
DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Application
SWITCHING
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | 2SK2615(TE12L,F) | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Ihs Manufacturer | TOSHIBA CORP |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | Pin Count | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 2 A | Drain Current-Max (ID) | 2 A |
| Drain-source On Resistance-Max | 0.44 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-F3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1.5 W |
| Surface Mount | YES | Terminal Form | FLAT |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SC-62-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 2 A |
| Rds On - Drain-Source Resistance | 440 mOhms | Series | 2SK2615 |
| Brand | Toshiba | Height | 1.6 mm |
| Length | 4.6 mm | Product Type | MOSFET |
| Factory Pack Quantity | 500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Width | 2.5 mm |
| Unit Weight | 0.001764 oz |
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