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2SJ555

60A, 60V, 0.036ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN

Inventory:4,764

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Quick Inquiry

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Overview of 2SJ555

Silicon P Channel MOS FET High Speed Power SwitchingFeatures • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

Key Features

  •   Low on-resistance
  • RDS(on)= 0.017Ω typ.
  •   Low drive current.
  •   4V gate drive devices.
  •   High speed switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SJ555 Pbfree Code No
Rohs Code No Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP Part Package Code TO-3P
Package Description TO-3P, 3 PIN Pin Count 3
Reach Compliance Code ECCN Code EAR99
Date Of Intro 1998-06-01 Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 60 A Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.036 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 240 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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