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2SCR583D3TL1

Trans GP BJT NPN 50V 7A 10000mW 3-Pin(2+Tab) DPAK T/R

Inventory:8,326

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Overview of 2SCR583D3TL1

Bipolar (BJT) Transistor NPN 50 V 7 A 280MHz 10 W Surface Mount TO-252

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ROHM Semiconductor Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 50 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 160 mV Maximum DC Collector Current 7 A
Pd - Power Dissipation 10 W Gain Bandwidth Product fT 280 MHz
Minimum Operating Temperature - Maximum Operating Temperature + 150 C
Brand ROHM Semiconductor Continuous Collector Current 7 A
DC Current Gain hFE Max 450 at 1 A, 3 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2500 Subcategory Transistors
Technology Si Part # Aliases 2SCR583D3

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