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2SCR553P5T100

Bipolar Transistors - BJT NPN 50V Vceo 2A Ic MPT3

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Overview of 2SCR553P5T100

Bipolar (BJT) Transistor NPN 50 V 2 A 360MHz 500 mW Surface Mount MPT3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
REACH Details Mounting Style SMD/SMT
Package / Case SOT-89-3 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 50 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 130 mV Maximum DC Collector Current 2 A
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 360 MHz
Maximum Operating Temperature + 150 C Series 2SxR
Brand ROHM Semiconductor Continuous Collector Current 2 A
DC Collector/Base Gain hfe Min 180 at 50 mA, 2 V DC Current Gain hFE Max 450 at 50 mA, 2 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1000
Subcategory Transistors Technology Si
Part # Aliases 2SCR553P5 Unit Weight 0.005464 oz

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