2SC5865TLR
Bipolar Transistors - BJT
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.215 | $0.22 |
200 | $0.085 | $17.00 |
500 | $0.083 | $41.50 |
1000 | $0.082 | $82.00 |
Inventory:5,193
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Part Number : 2SC5865TLR
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Package/Case : TSMT3
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Brands : Rohm Semiconductor
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Components Categories : Bipolar Transistors - BJT
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Datesheet : 2SC5865TLR DataSheet (PDF)
Overview of 2SC5865TLR
Bipolar (BJT) Transistor NPN 60 V 1 A 250MHz 500 mW Surface Mount TSMT3
Key Features
- 1) High speed switching. ( Tf : Typ. : 50ns at IC= 1.0A)
- 2) Low saturation voltage, typically.
- (Typ. : 200mV at IC= 500mA, IB = 50mA)
- 3) Strong discharge power for inductive load and
- capacitance load.
- 4) Low Noise.
- 5) Complements the 2SA2092.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | ROHM Semiconductor | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 6 V | Maximum DC Collector Current | 1 A |
Pd - Power Dissipation | 500 mW | Gain Bandwidth Product fT | 250 MHz |
Maximum Operating Temperature | + 150 C | Series | 2SC5865 |
Brand | ROHM Semiconductor | DC Collector/Base Gain hfe Min | 180 |
DC Current Gain hFE Max | 180 at 100 mA, 2 V | Height | 0.85 mm |
Length | 2.9 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Width | 1.6 mm |
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Warranty, Returns, and Additional Information
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