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2SC5865TLR

Bipolar Transistors - BJT

Quantity Unit Price(USD) Ext. Price
1 $0.215 $0.22
200 $0.085 $17.00
500 $0.083 $41.50
1000 $0.082 $82.00

Inventory:5,193

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for 2SC5865TLR or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2SC5865TLR

Bipolar (BJT) Transistor NPN 60 V 1 A 250MHz 500 mW Surface Mount TSMT3

Key Features

  • 1) High speed switching. ( Tf : Typ. : 50ns at IC= 1.0A)
  • 2) Low saturation voltage, typically.
  • (Typ. : 200mV at IC= 500mA, IB = 50mA)
  • 3) Strong discharge power for inductive load and
  • capacitance load.
  • 4) Low Noise.
  • 5) Complements the 2SA2092.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ROHM Semiconductor Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 1 A
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 250 MHz
Maximum Operating Temperature + 150 C Series 2SC5865
Brand ROHM Semiconductor DC Collector/Base Gain hfe Min 180
DC Current Gain hFE Max 180 at 100 mA, 2 V Height 0.85 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.6 mm

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