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2SC5200-O

Bipolar Transistors - BJT NPN 230V 15A

Inventory:4,345

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Overview of 2SC5200-O

POWER AMPLIFIER APPLICATIONS• Complementary to 2SA1943​​​​​​​• Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

Application

AMPLIFIER
Toshiba Semiconductor And Storage Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-3P-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 230 V Collector- Base Voltage VCBO 230 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 15 A Pd - Power Dissipation 150 W
Gain Bandwidth Product fT 30 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series 2SC
Brand Toshiba Continuous Collector Current 15 A
DC Collector/Base Gain hfe Min 55 DC Current Gain hFE Max 160
Height 26 mm Length 20.5 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 100
Subcategory Transistors Technology Si
Width 5.2 mm

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