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2SC3422

Silicon NPN Epitaxial Type (PCT Process)

Inventory:4,644

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Overview of 2SC3422


·With TO-126 package
·High DC current gain
·Low saturation voltage
·High collector power dissipation APPLICATIONS
·Storobo flash applications
·Medium power amplifier applications

Application

AMPLIFIER
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SC3422 Pbfree Code No
Rohs Code No Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.75
Samacsys Manufacturer Toshiba Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 40 V Configuration SINGLE
DC Current Gain-Min (hFE) 25 JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type NPN
Power Dissipation Ambient-Max 10 W Power Dissipation-Max (Abs) 10 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.8 V

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    Returns for refund: within 90 days

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