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2SAR586D3TL1

Bipolar Transistors - BJT PNP -80V -5A 10W Pwr trnstr Low VCE

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Overview of 2SAR586D3TL1

Bipolar (BJT) Transistor PNP 80 V 5 A 200MHz 10 W Surface Mount TO-252

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 5 A Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 320mV @ 100mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 3V Power - Max 10 W
Frequency - Transition 200MHz Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package TO-252 Base Product Number 2SAR586

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