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2SAR523UBTL

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN

Quantity Unit Price(USD) Ext. Price
20 $0.015 $0.30
200 $0.015 $3.00
600 $0.014 $8.40
3000 $0.014 $42.00

Inventory:7,627

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for 2SAR523UBTL or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2SAR523UBTL

PNP General Purpose Amplification Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Key Features

  • 1) Suitable for Middle Power Driver.
  • 2) Low VCE(sat)
  • VCE(sat)=-0.20V(Max.).
  • (IC/IB=-1A/-50mA)
  • 3) High collector current.
  • IC=-3A(max),ICP=-6A(max)
  • 4) Leadless small SMD package (HUML2020L3)
  • Excellent thermal and electrical conductivity.
  • 5) Lead Free/Rohs Compliant.

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-85 Package Description SMALL OUTLINE, R-PDSO-F3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE
DC Current Gain-Min (hFE) 120 JESD-30 Code R-PDSO-F3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 300 MHz

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