2SA1483-Y(TE12L,F)

Name: 2SA1483-Y(TE12L,F)
Brand: Toshiba Semiconductor And Storage
Rating: 4.5 (10 reviews)

Bipolar Transistors - BJT Pb-F POWER TRANSISTOR PW-MINI MOQ=1000 V=45V F=200MHZ

Inventory:7,140

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RF Transistor PNP 45V 200mA 200MHz Surface Mount PW-MINI

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	Bipolar Transistors - BJT	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	SC-62-3
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	200 mA	Gain Bandwidth Product fT	200 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	2SA	Brand	Toshiba
Continuous Collector Current	- 200 mA	DC Collector/Base Gain hfe Min	40
DC Current Gain hFE Max	200	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si

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