2N7002K-T1-GE3
The 2N7002K-T1-GE3 is an N-channel MOSFET featuring ESD protection, able to handle currents of 0
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.043 | $0.43 |
100 | $0.038 | $3.80 |
300 | $0.035 | $10.50 |
3000 | $0.025 | $75.00 |
6000 | $0.024 | $144.00 |
9000 | $0.023 | $207.00 |
Inventory:7,503
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Part Number : 2N7002K-T1-GE3
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Package/Case : SOT-23-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : 2N7002K-T1-GE3 DataSheet (PDF)
The 2N7002K-T1-GE3 is a N-channel MOSFET transistor designed for low-power, high-speed switching applications. It offers a compact and efficient solution for controlling electrical signals in electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N7002K-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the 2N7002K-T1-GE3 datasheet. Functionality The 2N7002K-T1-GE3 N-channel MOSFET transistor enables precise control of electrical signals in various electronic applications, providing efficient and reliable switching capabilities. Usage Guide Q: Is the 2N7002K-T1-GE3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the 2N7002K-T1-GE3:Overview of 2N7002K-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the 2N7002K-T1-GE3 is capable of operating at high frequencies, making it suitable for such applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 300 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 400 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
Channel Mode | Enhancement | Series | 2N7002K |
Brand | Vishay Semiconductors | Configuration | Single |
Forward Transconductance - Min | 100 mS | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 25 ns | Width | 1.6 mm |
Part # Aliases | 2N7002K-GE3 | Unit Weight | 0.000282 oz |
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