• 2N6782 TO-39
2N6782 TO-39

2N6782

Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39

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Overview of 2N6782

The 2N6782 is a power transistor designed for high-power switching applications. It is capable of handling significant voltage and current levels, making it suitable for various power control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N6782 transistor for a visual representation.

Key Features

  • High Power Handling Capacity: The 2N6782 can handle high power levels, suitable for demanding switching applications.
  • Robust Construction: Designed to withstand high voltages and currents, ensuring reliability in power circuits.
  • Fast Switching Speed: Offers fast switching characteristics, ideal for applications requiring quick response times.
  • Low Saturation Voltage: Features a low saturation voltage to minimize power losses during operation.
  • Temperature Stability: Maintains stable performance across a wide temperature range, suitable for varied operating conditions.

Note: For detailed technical specifications, please refer to the 2N6782 datasheet.

Application

  • Power Control Systems: Ideal for use in power control systems, such as motor control, lighting control, and voltage regulation.
  • Switching Circuits: Suitable for driving high-power switching circuits in industrial and automotive applications.
  • Amplifier Circuits: Can be used in amplifier circuits to control high currents with efficiency.

Functionality

The 2N6782 power transistor is designed to provide efficient power switching capabilities in various electronic circuits, ensuring reliable performance in high-power applications.

Usage Guide

  • Pin Connections: Connect the Emitter, Base, and Collector pins to the appropriate terminals based on the circuit requirements.
  • Power Ratings: Ensure that the power levels and voltage ratings of the 2N6782 match the specifications of the application.
  • Thermal Management: Implement proper heat sinking measures to maintain the transistor within safe operating temperatures.

Equivalent

For similar functionalities, consider these alternatives to the 2N6782:

  • 2N3055: A widely used power transistor with similar power handling capabilities and voltage ratings.
  • 2N5038: This transistor offers comparable performance to the 2N6782 in power switching applications.

2N6782

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Microsemi Corporation
Series - Package Bulk
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 10 V Vgs (Max) ±20V
FET Feature - Power Dissipation (Max) 800mW (Ta), 15W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-39 Package / Case TO-205AF Metal Can

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