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2N6040

Darlington Transistors 8A 60V Bipolar

Quantity Unit Price(USD) Ext. Price
1 $2.011 $2.01
200 $0.803 $160.60
500 $0.776 $388.00
1000 $0.763 $763.00

Inventory:6,390

*The price is for reference only.
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Overview of 2N6040

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

Key Features

  • High DC Current Gain -
    hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc -
    VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
    VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
    VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44
    VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Mfr onsemi
Series - Package Tube
Product Status Obsolete Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 8 A Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 2V @ 16mA, 4A Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V Power - Max 75 W
Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole Package / Case TO-220-3
Supplier Device Package TO-220 Base Product Number 2N6040

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