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2N3250

Bipolar Transistors - BJT TO-18 PNP GEN PUR SS

Inventory:6,944

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Overview of 2N3250

Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 360 mW Through Hole TO-18

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code No
Part Life Cycle Code Active Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.21.00.75 Samacsys Manufacturer Central Semiconductor
Collector Current-Max (IC) 0.2 A Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 40 V Configuration SINGLE
DC Current Gain-Min (hFE) 15 JEDEC-95 Code TO-18
JESD-30 Code O-MBCY-W3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 200 °C Operating Temperature-Min -65 °C
Package Body Material METAL Package Shape ROUND
Package Style CYLINDRICAL Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 1.2 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
Turn-off Time-Max (toff) 225 ns Turn-on Time-Max (ton) 70 ns
VCEsat-Max 0.5 V

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