• 2N2326 TO-5
2N2326 TO-5

2N2326

SCR 200V 15A 3-Pin TO-5

Quantity Unit Price(USD) Ext. Price
1 $13.582 $13.58
200 $5.420 $1,084.00
500 $5.239 $2,619.50
1000 $5.150 $5,150.00

Inventory:4,576

*The price is for reference only.
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Overview of 2N2326

The 2N2326 is a bipolar junction transistor (BJT) designed for high-speed switching applications. This transistor is commonly used in amplification and digital circuit designs where fast switching speeds are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Supplies electrons to the transistor.
  • Base (B): Controls the current flow between the emitter and collector.
  • Collector (C): Collects the majority of electrons from the emitter.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N2326 transistor for a visual representation.

Key Features

  • High-Speed Switching: The 2N2326 offers rapid switching capabilities, making it suitable for high-frequency applications.
  • Amplification: This BJT can be used for signal amplification in audio and radio frequency circuits.
  • Low Noise: With its low noise characteristics, the 2N2326 is ideal for applications requiring minimal interference.
  • High Voltage Capability: The transistor can handle high voltages, making it versatile for different circuit designs.
  • Compact Size: The 2N2326 comes in a small package, allowing for space-efficient circuit layouts.

Note: For detailed technical specifications, please refer to the 2N2326 datasheet.

Application

  • Switching Circuits: Ideal for use in high-speed switching circuits such as digital logic gates and waveform generators.
  • Amplifier Design: Suitable for amplification stages in audio amplifiers, RF circuits, and signal processing systems.
  • Oscillator Circuits: Can be utilized in oscillator circuits for generating continuous waveforms at high frequencies.

Functionality

The 2N2326 BJT is designed for fast switching operations and efficient amplification in various electronic circuits. It provides reliable performance in high-speed applications.

Usage Guide

  • Emitter Connection: Connect the emitter pin to the ground or signal reference point.
  • Base Biasing: Apply the appropriate bias voltage to the base pin for controlling the transistor's conductivity.
  • Collector Load: Connect the collector pin to the load resistor or component for desired output.

Equivalent

For similar functionalities, consider these alternatives to the 2N2326:

  • 2N2222: A versatile general-purpose BJT with good switching and amplification characteristics.
  • 2N3904: A commonly used NPN transistor for low-power amplification and switching applications.

2N2326

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsThyristorsSCRs Mfr Solid State Inc.
Series C5 Package Bulk
Product Status Active Voltage - Off State 200 V
Voltage - Gate Trigger (Vgt) (Max) 800 mV Current - Gate Trigger (Igt) (Max) 200 µA
Voltage - On State (Vtm) (Max) 2.2 V Current - On State (It (RMS)) (Max) 1.6 A
Current - Hold (Ih) (Max) 2 mA Current - Off State (Max) 10 µA
Current - Non Rep. Surge 50, 60Hz (Itsm) 15A SCR Type Standard Recovery
Operating Temperature -65°C ~ 125°C (TJ) Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can Supplier Device Package TO-5

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