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2DA1774QLP-7B

Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K

Quantity Unit Price(USD) Ext. Price
5 $0.101 $0.50
50 $0.083 $4.15
150 $0.074 $11.10
500 $0.067 $33.50
2500 $0.061 $152.50
5000 $0.059 $295.00

Inventory:5,697

*The price is for reference only.
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Overview of 2DA1774QLP-7B

Bipolar (BJT) Transistor PNP 40 V 100 mA 100MHz 250 mW Surface Mount X1-DFN1006-3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Power - Max 250 mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case DFN1006-3
Supplier Device Package X1-DFN1006-3 Base Product Number 2DA1774
Manufacturer Diodes Incorporated Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 250 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Qualification AEC-Q101
Series 2DA17 Brand Diodes Incorporated
Continuous Collector Current - 100 mA DC Collector/Base Gain hfe Min 120
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 10000
Subcategory Transistors Technology Si
Unit Weight 0.282192 oz

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