• packageimg
packageimg

UMD22NTR

High voltage tolerance of 50V and ultra-low leakage current of 500nA

Quantity Unit Price(USD) Ext. Price
10 $0.038 $0.38
100 $0.033 $3.30
300 $0.030 $9.00
3000 $0.028 $84.00
6000 $0.027 $162.00
9000 $0.026 $234.00

Inventory:5,697

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for UMD22NTR using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of UMD22NTR

With the UMD22NTR, you can streamline your circuit design without compromising on performance. This compact device packs a punch with its ability to integrate two transistors into a single package, making it a top choice for applications such as pre-amplifier differential amplification circuits and more. Its ultra-compact size ensures that it can be easily incorporated into your design, saving space and simplifying your layout

Key Features

BUILT-IN BIAS RESISTOR RATIO IS 10

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz
Power - Max 150mW Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package UMT6
Base Product Number UMD22

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

SSM3K35AMFV,L3F

SSM3K35AMFV,L3F

MOSFET Transistor with N-type Channel, Suitable for Low-Power Applications at 20V
SI8483DB-T2-E1

SI8483DB-T2-E1

P Channel BGA-6 MOSFET with a voltage rating of 12V and a maximum current capacity of 16A at 26mΩ resistance when operated at 4.5V
KSE350STU

KSE350STU

PNP Silicon Transistor with Epitaxial Technology
DMN6040SSD-13

DMN6040SSD-13

DMN6040SSD-13 60V Dual N-Ch Enhancement MOSFET SOIC8 by Diodes Inc
MJD112-1G

MJD112-1G

MJD112-1G Transistor
IXTK22N100L

IXTK22N100L

channel 1000V MOSFET with a current rating of 22A
IRLHS6242TRPBF

IRLHS6242TRPBF

EP package for compact footprint
TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ

The gate capacitance of this MOSFET is 3950pF
BC33725TA

BC33725TA

BC33725TA, a TO-92 packaged NPN transistor, is engineered for general-purpose use, offering a voltage rating of 45V and a current rating of 0
PMV60EN

PMV60EN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET