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TSHA6503

Infrared Emitter 875nm 35mW/sr Circular Top Mount 2-Pin T-1 3/4

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Overview of TSHA6503

DescriptionThe TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.In contrast to the TSHA550. series lead stand–offs are omitted.Features● Extra high radiant power● Suitable for high pulse current operation● Standard T–1 (ø 5 mm) package● Leads formed without stand–off● Angle of half intensity ϕ = ± 24°● Peak wavelength λp = 875 nm● High reliability● Good spectral matching to Si photodetectorsApplications    Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.    Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Infrared Emitters - High Power RoHS Details
Mounting Style Through Hole Wavelength 875 nm
Radiant Intensity 420 mW/sr If - Forward Current 100 mA
Power Rating 210 mW Package / Case T-1 3/4 (5 mm)
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 100 C
Brand Vishay Semiconductors Height 8.7 mm
Illumination Color Infrared Length 5.8 mm
Lens Dimensions 5 mm x 5 mm x 7.7 mm Lens Shape Circular
Product Type IR Emitters (IR LEDs) Factory Pack Quantity 4000
Subcategory Infrared Data Communications Viewing Angle 24 deg
Vr - Reverse Voltage 5 V Width 5.8 mm

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