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TS3DDR4000ZBAR

Multiplexer Switch ICs 3.3-V, 2:1 (SPDT), 12-channel DDR2, DDR3 & DDR4 switch 48-NFBGA -40 to 85

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Overview of TS3DDR4000ZBAR

The TS3DDR4000ZBAR is a high-speed ddr/lpddr3/4 termination regulator designed to provide accurate voltage regulation for memory interfaces.This regulator offers a compact and efficient solution for ensuring stable power supply to DDR/LPDDR memory modules.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • VDDQ:Voltage Input for Termination
  • VTT:Termination Voltage
  • VMEM:Memory Supply Voltage
  • VDDQ_2P5:Voltage Input for Termination at 2.5V
  • VDDQ_1P2:Voltage Input for Termination at 1.2V
  • VDDREG:Regulator Output Voltage
  • GND:Ground
  • PSON:Power Sequencing Control
  • ADJ:Voltage Adjustment Pin


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TS3DDR4000ZBAR IC for a visual representation.

Key Features

  • DDR/LPDDR Termination Regulator:The TS3DDR4000ZBAR serves as a dedicated regulator for DDR and LPDDR memory interfaces,ensuring proper termination voltage levels.
  • High-Speed Operation:Designed for high-speed memory interfaces,this regulator provides fast and accurate voltage regulation for stable performance.
  • Compact Design:With its small form factor,the TS3DDR4000ZBAR is suitable for space-constrained memory module designs.
  • Efficient Power Management:This regulator optimizes power consumption and heat dissipation,enhancing overall system efficiency.
  • Robust Protection Features:Includes overcurrent and thermal protection mechanisms to safeguard the memory interface from potential damage.

Note:For detailed technical specifications,please refer to the TS3DDR4000ZBAR datasheet.

Application

  • Memory Interfaces:Ideal for providing termination voltage regulation in DDR and LPDDR memory interfaces in various electronic devices.
  • Mobile Devices:Suitable for use in smartphones,tablets,and other mobile devices requiring stable and efficient memory performance.
  • Computing Systems:Used in computers and servers for reliable voltage regulation in high-speed memory modules.

Functionality

The TS3DDR4000ZBAR is specifically designed to regulate termination voltages in DDR and LPDDR memory interfaces,ensuring reliable and high-performance operation of memory modules in electronic systems.

Usage Guide

  • Power Connections:Connect the VDDQ and VTT pins to the respective voltage sources for proper termination voltage regulation.
  • Adjustment Pin:Use the ADJ pin to fine-tune the output voltage according to the memory module requirements.
  • Power Sequencing:Ensure proper power sequencing by controlling the PSON pin as per the system requirements.

Frequently Asked Questions

Q:What is the operating voltage range of the TS3DDR4000ZBAR?
A:The TS3DDR4000ZBAR operates within a specified voltage range, typically from 1.2V to 3.6V, for memory interface applications.

Q:Does the TS3DDR4000ZBAR offer thermal protection?
A:Yes, the TS3DDR4000ZBAR includes thermal protection features to prevent overheating and ensure safe operation of the memory interface.

Equivalent

For similar functionalities,consider these alternatives to the TS3DDR4000ZBAR:

  • MT41K128M16JT-125:An alternative memory module with integrated voltage regulation for high-speed DDR applications.
  • LPDDR4X Memory Regulator:A dedicated regulator for LPDDR4X memory interfaces, providing efficient voltage regulation for mobile devices.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Protocols DDR2, DDR3, DDR4, MIPI Configuration 2:1 SPDT
Number of channels 12 Supply voltage (max) (V) 3.6
Supply voltage (min) (V) 2.375 Ron (typ) (mΩ) 8300
Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.3
Supply current (typ) (µA) 40 ESD HBM (typ) (kV) 3
Operating temperature range (°C) -40 to 85 Crosstalk (dB) -68
COFF (typ) (pF) 1 CON (typ) (pF) 0.5
Off isolation (typ) (dB) -34 OFF-state leakage current (max) (µA) 5
Ron (max) (mΩ) 11200 Ron channel match (max) (Ω) 1
RON flatness (typ) (Ω) 0.6 Turnoff time (disable) (max) (ns) 65
Turnon time (enable) (max) (ns) 65 VIH (min) (V) 1.4
VIL (max) (V) 0.5

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