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TH58NVG6H2HTAK0

Compact and durable design ensures reliable operation in demanding environment

Inventory:8,855

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Overview of TH58NVG6H2HTAK0

The TH58NVG6H2HTAK0 is a NAND Flash memory IC that offers high-speed data storage and retrieval capabilities.This IC features a large storage capacity and fast read/write speeds,making it suitable for a wide range of applications that require non-volatile memory.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • VCC:Power Supply
  • GND:Ground
  • CE:Chip Enable
  • RE:Read Enable
  • WE:Write Enable
  • RB:Ready/Busy Status
  • A0-A18:Address Lines
  • DQ0-DQ15:Data Input/Output Lines

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TH58NVG6H2HTAK0 IC for a visual representation.

Key Features

  • High-Speed Data Access: The TH58NVG6H2HTAK0 offers fast read and write speeds, providing quick data access for efficient operation.
  • Large Storage Capacity: With its high storage capacity, this NAND Flash memory IC can store a significant amount of data.
  • Low Power Consumption: Designed for low power consumption, making it suitable for power-sensitive applications.
  • Reliable Performance: The TH58NVG6H2HTAK0 delivers reliable performance with robust data retention and endurance characteristics.
  • Wide Operating Temperature Range: Operates over a wide temperature range, making it suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the TH58NVG6H2HTAK0 datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring non-volatile data storage.
  • Consumer Electronics: Suitable for consumer electronic devices such as digital cameras, smartphones, and tablets.
  • Industrial Automation: Used in industrial automation applications for data logging and program storage.

Functionality

The TH58NVG6H2HTAK0 NAND Flash memory IC provides reliable, high-speed data storage and retrieval capabilities, making it a versatile solution for various memory storage applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the power supply and GND (Pin 2) to ground.
  • Data Connections: Utilize the address lines (A0-A18) and data lines (DQ0-DQ15) for data input and output operations.
  • Control Signals: Use the CE, RE, and WE pins to control the chip enable, read enable, and write enable functions, respectively.

Frequently Asked Questions

Q: Is the TH58NVG6H2HTAK0 compatible with 3.3V and 5V systems?
A: Yes, the TH58NVG6H2HTAK0 can operate with both 3.3V and 5V systems, offering versatile compatibility.

Equivalent

For similar functionalities, consider these alternatives to the TH58NVG6H2HTAK0:

  • Samsung K9F1G08U0B: A NAND Flash memory IC offering comparable performance and features to the TH58NVG6H2HTAK0.
  • Micron MT29F2G08AB: This NAND Flash memory IC from Micron provides similar high-speed data storage capabilities for various applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category EEPROM Series TH58NVG6H2
Brand Toshiba Product Type EEPROM
Subcategory Memory & Data Storage

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