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TH58NVG4S0FTAK0

NAND Flash Memory with 16G-bit Capacity

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Overview of TH58NVG4S0FTAK0

The TH58NVG4S0FTAK0 is a NAND flash memory IC that offers high-density storage and fast access times,making it suitable for a wide range of data storage and retrieval applications.It is designed to provide reliable and efficient non-volatile storage for various electronic devices and systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • DQ0-DQ7:Data Input/Output Lines
  • A-1-A-16:Address Inputs
  • CE:Chip Enable
  • RP:Ready/Busy Output
  • WE:Write Enable
  • CLE:Command Latch Enable
  • ALE:Address Latch Enable
  • WEH:High Voltage Write Enable
  • VCC:Positive Power Supply
  • GND:Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TH58NVG4S0FTAK0 IC for a visual representation.

Key Features

  • High-Density Storage: The TH58NVG4S0FTAK0 offers high-density NAND flash memory,providing ample storage capacity for data-intensive applications.
  • Fast Access Times: With its high-speed interface,this IC enables fast data access and transfer,making it suitable for performance-critical systems.
  • Reliable Data Retention: This NAND flash memory IC ensures reliable data retention and endurance,meeting the demands of data storage applications.
  • Low Power Consumption: The TH58NVG4S0FTAK0 is designed for low power consumption,making it suitable for battery-powered devices.
  • Wide Operating Voltage Range: With its flexible operating voltage range,this IC can be used in a variety of electronic systems.

Note: For detailed technical specifications,please refer to the TH58NVG4S0FTAK0 datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems that require non-volatile memory storage,such as industrial control systems and consumer electronics.
  • Mobile Devices: Suitable for storing firmware,operating systems,and user data in mobile phones,tablets,and other portable devices.
  • Solid-State Drives(SSDs): Used in SSDs for high-speed and high-capacity data storage in computing systems.

Functionality

The TH58NVG4S0FTAK0 is a high-density NAND flash memory IC that provides reliable,high-speed storage for a wide range of applications.It offers fast access times and efficient data retention,making it suitable for demanding data storage needs.

Usage Guide

  • Power Supply: Connect VCC(Pin 9) to the positive power supply and GND(Pin 10) to ground.
  • Data Transfer: Use the DQ0-DQ7 pins for data input and output,utilizing the CE,WE,and other control pins as necessary for memory operations.
  • Interface Control: Utilize the control inputs such as CE,WE,ALE, and CLE to access and manage the memory array effectively.

Frequently Asked Questions

Q:What is the maximum storage capacity of the TH58NVG4S0FTAK0?
A:The TH58NVG4S0FTAK0 offers high-density storage,with capacities ranging up to several gigabytes depending on the specific variant.

Q:Can the TH58NVG4S0FTAK0 operate in low-power modes?
A:Yes,the TH58NVG4S0FTAK0 is designed for low power consumption and can operate efficiently in low-power modes,ideal for battery-powered devices.

Equivalent

For similar functionalities,consider these alternatives to the TH58NVG4S0FTAK0:

  • SanDisk SDINBDA4-128G: This NAND flash memory IC from SanDisk offers similar high-density storage and fast access times for data-intensive applications.
  • Samsung K9F2G08U0C: A NAND flash memory IC from Samsung with high-speed interface and reliable data retention characteristics.
  • Toshiba TC58NVG6T2HTA00: Another high-density NAND flash memory IC from Toshiba,providing ample storage capacity and efficient data access.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Memory Size 16 Gbit Interface Type Parallel
Organization 2 G x 8 Data Bus Width 8 bit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Supply Current - Max 30 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Active Read Current - Max 30 mA
Brand Kioxia America Memory Type NAND
Moisture Sensitive Yes Product NAND Flash
Product Type NAND Flash Factory Pack Quantity 96
Subcategory Memory & Data Storage

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