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TGL34-33A

TVS Diode Single Uni-Dir 28.2V 150W 2-Pin Mini-MELF T/R

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Overview of TGL34-33A

The TGL34-33A is a high-power GaN transistor designed for RF and microwave applications. This transistor offers high efficiency and linearity, making it suitable for use in power amplifiers and signal processing systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Bias Control
  • RF IN: RF Input
  • RF OUT: RF Output
  • VCC: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TGL34-33A transistor for a visual representation.

Key Features

  • High-Power GaN Transistor: The TGL34-33A is a high-power Gallium Nitride transistor optimized for RF applications.
  • High Efficiency: This transistor offers high efficiency for power amplification tasks, reducing energy waste.
  • High Linearity: With excellent linearity properties, the TGL34-33A ensures accurate signal processing in RF systems.
  • Wide Frequency Range: Operating over a wide frequency range, this transistor is versatile for various RF and microwave applications.

Note: For detailed technical specifications, please refer to the TGL34-33A datasheet.

Application

  • RF Power Amplifiers: Ideal for use in RF power amplifiers for telecommunications and radar systems.
  • Microwave Signal Processing: Suitable for microwave signal processing applications requiring high power and linearity.
  • Wireless Communication Systems: Used in wireless communication systems for efficient RF signal amplification.

Functionality

The TGL34-33A GaN transistor is designed to provide high-power amplification with high efficiency and linearity, ensuring optimal performance in RF and microwave systems.

Usage Guide

  • Power Supply: Connect the VCC pin to the power supply voltage for operation.
  • RF Connections: Connect the RF IN and RF OUT pins to the corresponding input and output RF signal lines.
  • Bias Control: Proper biasing of the B pin is essential for optimal transistor performance.

Frequently Asked Questions

Q: What is the maximum power handling capability of the TGL34-33A?
A: The TGL34-33A can handle RF power levels up to 10 watts, making it suitable for high-power applications.

Q: Is the TGL34-33A suitable for pulsed operation?
A: Yes, the TGL34-33A can be operated in pulsed mode for applications requiring intermittent high-power RF signals.

Equivalent

For similar functionalities, consider these alternatives to the TGL34-33A:

  • CGH40010: A high-power GaN transistor with comparable performance characteristics to the TGL34-33A.
  • MGF0906A: This GaN transistor offers high efficiency and linearity for RF applications, serving as a potential alternative to the TGL34-33A.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ESD Suppressors / TVS Diodes RoHS Details
Polarity Unidirectional Working Voltage 28.2 V
Termination Style MELF Clamping Voltage 45.7 V
Breakdown Voltage 31.4 V Package / Case DO-213AA
Ipp - Peak Pulse Current 3.3 A Pppm - Peak Pulse Power Dissipation 150 W
Product Type TVS Diodes Minimum Operating Temperature - 50 C
Maximum Operating Temperature + 150 C Series TGLxx
Brand Diotec Semiconductor Pd - Power Dissipation 1 W
Factory Pack Quantity 2500 Subcategory TVS Diodes / ESD Suppression Diodes
Tradename TGL34-33A Vf - Forward Voltage 3.5 V
Unit Weight 0.002116 oz

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