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TGA2585-SM

RF Amplifier Utilizing GaN Technology for Enhanced Performance

Inventory:8,591

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Overview of TGA2585-SM

The TGA2585-SM is a high-power, high-efficiency gallium arsenide (GaAs) power amplifier designed for X-band radar and communication applications. This amplifier delivers high output power and linearity, making it suitable for demanding RF systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Positive Power Supply
  • VGG: Gate Bias Voltage
  • VSS: Ground Connection
  • VDDQ: Auxiliary Positive Power Supply
  • VGGQ: Auxiliary Gate Bias Voltage
  • RF IN: Radio Frequency Input
  • RF OUT: Radio Frequency Output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TGA2585-SM for a visual representation.

Key Features

  • High Power Amplification: The TGA2585-SM provides high output power to amplify signals in X-band applications.
  • High Efficiency: This GaAs power amplifier offers high efficiency, minimizing power consumption and heat generation.
  • Wide Bandwidth: With its X-band capability, the TGA2585-SM covers a broad range of frequencies for versatile applications.
  • Compact Size: The amplifier comes in a compact package, ideal for space-constrained RF systems.
  • Excellent Linearity: Maintains high linearity to preserve signal integrity and minimize distortion.

Note: For detailed technical specifications, please refer to the TGA2585-SM datasheet.

Application

  • X-Band Radar Systems: Ideal for use in X-band radar systems for signal amplification and transmission.
  • X-Band Communication Systems: Suitable for X-band communication systems requiring high-power amplification.
  • Radio Frequency Transmitters: Used in RF transmitters for amplifying signals in X-band frequencies.

Functionality

The TGA2585-SM is a high-power GaAs amplifier designed to amplify signals in X-band applications with high efficiency and linearity, ensuring reliable performance in demanding RF systems.

Usage Guide

  • Power Supply: Connect VDD and VDDQ to the positive power supplies, and VSS to the ground connection.
  • Biasing: Apply appropriate gate bias voltages (VGG and VGGQ) for optimal amplifier performance.
  • RF Connections: Connect the RF input signal to RF IN and output signal to RF OUT for amplification.

Frequently Asked Questions

Q: What is the output power of the TGA2585-SM?
A: The TGA2585-SM is capable of delivering high output power suitable for X-band applications, with specific values outlined in the datasheet.

Q: Is the TGA2585-SM suitable for pulse radar applications?
A: Yes, the TGA2585-SM is designed to meet the requirements of pulse radar applications in the X-band frequency range.

Equivalent

For similar functionalities, consider these alternatives to the TGA2585-SM:

  • TGA2576-SM: Another high-power GaAs amplifier designed for X-band applications with slightly different performance characteristics.
  • TGA2567-SM: A GaAs power amplifier offering similar features to the TGA2585-SM in a different package size.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Amplifier RoHS Details
Mounting Style SMD/SMT Package / Case QFN-32
Type Power Amplifiers Technology GaN SiC
Operating Frequency 2.7 GHz to 3.7 GHz P1dB - Compression Point 42.5 dBm
Gain 32 dB Operating Supply Voltage 28 V
Operating Supply Current 225 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Series TGA2585
Brand Qorvo Input Return Loss 15 dB
Number of Channels 1 Channel Pd - Power Dissipation 35 W
Product GaN Product Type RF Amplifier
Factory Pack Quantity 50 Subcategory Wireless & RF Integrated Circuits
Part # Aliases 1112110 TGA2585 1112110 Unit Weight 0.006653 oz

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