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TC58BVG2S0HTA00

High-Temperature NAND Flash Memory with 3.3V Power Supply, 4Gb Capacity, and 24nm SLC NAND Structure

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Overview of TC58BVG2S0HTA00

The TC58BVG2S0HTA00 is a NAND flash memory IC with a capacity of 8 gigabits (1 gigabyte). It features high-speed data transfer and is designed for use in various digital storage and data exchange applications, including solid-state drives (SSDs), memory cards, and industrial storage systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • CE: Chip enable
  • ALE: Address latch enable
  • WE: Write enable
  • RE: Read enable
  • RB: Ready/busy output
  • CLE: Command latch enable
  • RY/BY: Ready/busy output
  • WP: Write protect
  • VCC: Power supply
  • GND: Ground
  • DQ0-DQ15: Data input/output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TC58BVG2S0HTA00 for a visual representation.

Key Features

  • High Capacity: Offers a storage capacity of 8 gigabits (1 gigabyte), suitable for storing large amounts of data.
  • High-Speed Data Transfer: Provides fast read and write speeds, enhancing data access and transfer efficiency.
  • Wide Operating Voltage Range: Operates within a wide voltage range, making it compatible with various systems and applications.
  • Industrial-Grade Reliability: Designed for industrial applications with robust performance and data integrity.
  • Low Power Consumption: Consumes minimal power during operation, ideal for energy-efficient devices.

Note: For detailed technical specifications, please refer to the TC58BVG2S0HTA00 datasheet.

Application

  • Solid-State Drives (SSDs): Ideal for use in high-capacity SSDs for fast and reliable data storage.
  • Memory Cards: Suitable for integration into memory cards for digital cameras, smartphones, and other portable devices.
  • Industrial Storage Systems: Used in industrial-grade storage solutions requiring high-speed and high-capacity memory.

Functionality

The TC58BVG2S0HTA00 is a high-capacity NAND flash memory IC designed for reliable data storage and high-speed data transfer. It provides efficient storage solutions for various digital applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 9) to the power supply and GND (Pin 10) to the ground.
  • Data Connections: Utilize the DQ0-DQ15 pins for data input and output operations.
  • Control Inputs: Use the CE, ALE, WE, RE, and CLE pins for control and addressing operations.

Frequently Asked Questions

Q: What is the maximum data transfer speed of the TC58BVG2S0HTA00?
A: The TC58BVG2S0HTA00 offers high-speed data transfer, with specific speeds detailed in the product datasheet.

Q: Can the TC58BVG2S0HTA00 withstand extended temperature ranges?
A: Yes, the TC58BVG2S0HTA00 is designed for industrial applications and can operate within extended temperature ranges, providing reliability in harsh environments.

Equivalent

For similar functionalities, consider these alternatives to the TC58BVG2S0HTA00:

  • TC58NVG2S0HTA00: This NAND flash memory IC offers similar performance and capacity, providing an alternative for storage solutions.
  • MT29F8G08ABACAWP: This NAND flash memory IC from Micron Technology provides comparable features and capacity for diverse storage applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Memory Size 4 Gbit Interface Type Parallel
Organization 512 M x 8 Timing Type Synchronous
Data Bus Width 8 bit Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V Supply Current - Max 30 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature + 70 C
Active Read Current - Max 30 mA Brand Kioxia America
Memory Type NAND Moisture Sensitive Yes
Product Type NAND Flash Factory Pack Quantity 96
Subcategory Memory & Data Storage Unit Weight 0.018695 oz

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