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STW65N65DM2AG

Trans MOSFET N-CH 650V 60A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube

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Overview of STW65N65DM2AG

Featuring a TO247 package, the STW65N65DM2AG MOSFET offers reliable performance in a compact form factor. The Rds(on) test voltage of 10V ensures accurate testing and characterization, making it easy to integrate into existing circuit designs or prototypes

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 50 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 446 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename MDmesh
Series STW65N65DM2AG Brand STMicroelectronics
Configuration Single Fall Time 11.5 ns
Height 5.15 mm Length 20.15 mm
Product Power MOSFETs Product Type MOSFET
Rise Time 13.5 ns Factory Pack Quantity 600
Subcategory MOSFETs Type High Voltage
Typical Turn-Off Delay Time 114 ns Typical Turn-On Delay Time 33 ns
Width 15.75 mm Unit Weight 0.211644 oz

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