STW42N60M2-EP
N-channel MOSFET with high voltage and current capabilitie
Inventory:4,305
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Part Number : STW42N60M2-EP
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Package/Case : TO-247-3
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STW42N60M2-EP DataSheet (PDF)
Overview of STW42N60M2-EP
The STW42N60M2-EP sets a new standard for N-channel Power MOSFETs with its groundbreaking MDmesh™ M2 EP enhanced performance technology. Its strip layout and vertical structure enable low on-resistance and optimized switching characteristics, making it an ideal choice for the most demanding very high frequency converters. This advanced MOSFET is sure to meet the needs of industries and applications that require top-tier performance and reliability
Key Features
- Superior electromagnetic compatibility
- Low noise emissions
- Robust voltage sag performance
- Fault-tolerant operation available
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STW42N60M2-EP | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Additional Feature | BULK: 1000 |
Avalanche Energy Rating (Eas) | 800 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 34 A | Drain-source On Resistance-Max | 0.087 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 2.5 pF |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 250 W | Pulsed Drain Current-Max (IDM) | 136 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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