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STW42N60M2-EP

N-channel MOSFET with high voltage and current capabilitie

Inventory:4,305

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Overview of STW42N60M2-EP

The STW42N60M2-EP sets a new standard for N-channel Power MOSFETs with its groundbreaking MDmesh™ M2 EP enhanced performance technology. Its strip layout and vertical structure enable low on-resistance and optimized switching characteristics, making it an ideal choice for the most demanding very high frequency converters. This advanced MOSFET is sure to meet the needs of industries and applications that require top-tier performance and reliability

Key Features

  • Superior electromagnetic compatibility
  • Low noise emissions
  • Robust voltage sag performance
  • Fault-tolerant operation available

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STW42N60M2-EP Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Additional Feature BULK: 1000
Avalanche Energy Rating (Eas) 800 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 34 A Drain-source On Resistance-Max 0.087 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 2.5 pF
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W Pulsed Drain Current-Max (IDM) 136 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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