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STPSC40065CW

Schottky Silicon Carbide Diode with 650V Voltage Rating"

Inventory:6,376

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Overview of STPSC40065CW

STPSC40065CW is a high-performance SiC diode featuring a high voltage power Schottky setup. Crafted using a silicon carbide substrate, this diode offers an impressive 650 V rating owing to the wide band gap material utilized in its design. Its Schottky configuration ensures a smooth turn-off process without any recovery phase, effectively minimizing ringing patterns. Furthermore, the diode exhibits minimal capacitive turn-off behavior that remains consistent regardless of temperature changes. Whether utilized as a freewheeling or output rectification diode, STPSC40065CW is poised to optimize the functionality and size of targeted power supplies or inverters

Key Features

  • Suitable for high-frequency switching
  • Low standby current consumption
  • No electromagnetic interference

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
Diode Configuration 1 Pair Common Cathode Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V Current - Average Rectified (Io) (per Diode) 20A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 300 µA @ 600 V Operating Temperature - Junction -40°C ~ 175°C
Mounting Type Through Hole Package / Case TO-247-3
Supplier Device Package TO-247-3 Base Product Number STPSC40065

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