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STP9NK50ZFP

Trans MOSFET N-CH 500V 7.2A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.216 $1.22
10 $1.189 $11.89
30 $1.171 $35.13
100 $1.155 $115.50

Inventory:7,343

*The price is for reference only.
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Overview of STP9NK50ZFP

The STP9NK50ZFP exemplifies the pinnacle of power MOSFET technology, representing ST's dedication to excellence and innovation in the field. As a key component of the SuperMESH™ series, this MOSFET boasts a meticulously optimized layout that minimizes on-resistance and enhances dv/dt capability, making it a standout choice for demanding applications. ST's commitment to quality shines through in the design and construction of the STP9NK50ZFP, ensuring that users can rely on its exceptional performance and durability. With this cutting-edge MOSFET at their disposal, customers can confidently tackle high voltage challenges with precision and ease

Key Features

  • Superior thermal performance
  • Minimized electromagnetic interference
  • Fast device response times
  • Reliable operation guaranteed

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP9NK50ZFP Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description TO-220FP, 3 PIN Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 190 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 7.2 A Drain Current-Max (ID) 7.2 A
Drain-source On Resistance-Max 0.85 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 28.8 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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