• STP4NK60ZFP TO-220FP
STP4NK60ZFP TO-220FP

STP4NK60ZFP

Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $0.529 $0.53
10 $0.427 $4.27
30 $0.377 $11.31
100 $0.294 $29.40
500 $0.265 $132.50
1000 $0.248 $248.00

Inventory:6,269

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Overview of STP4NK60ZFP

The STP4NK60ZFP is a N-channel Power MOSFET designed for high-performance applications. This MOSFET features a low on-state resistance and high switching speed, making it suitable for various power management and switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • B: Body Diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STP4NK60ZFP MOSFET for a visual representation.

Key Features

  • High Performance: The STP4NK60ZFP offers high performance with low on-state resistance and fast switching speed.
  • Low Thermal Resistance: With its low thermal resistance, this MOSFET efficiently dissipates heat, ensuring reliable operation in demanding environments.
  • Enhanced Robustness: Designed for enhanced robustness, the STP4NK60ZFP can withstand high voltages and currents.
  • Wide Operating Temperature Range: This MOSFET operates over a wide temperature range, making it suitable for various operating conditions.
  • ESD Protection: Incorporates ESD protection to safeguard against electrostatic discharge events, ensuring device reliability.

Note: For detailed technical specifications, please refer to the STP4NK60ZFP datasheet.

Application

  • Power Management: Ideal for power management applications such as voltage regulation and power switching.
  • Switching Circuits: Suitable for use in switching circuits, including DC-DC converters and motor control.
  • High-Power Amplifiers: Used in high-power amplifier circuits for efficient power handling.

Functionality

The STP4NK60ZFP is a high-performance N-channel Power MOSFET designed for efficient power management and switching applications. It offers low on-state resistance and fast switching speed, ensuring reliable operation in various scenarios.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate pin (G) to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain (D) and source (S) pins of the MOSFET.
  • Heat Dissipation: Ensure adequate heat sinking to dissipate heat generated during operation, especially in high-power applications.

Frequently Asked Questions

Q: Can the STP4NK60ZFP be used in high-frequency switching applications?
A: Yes, the STP4NK60ZFP offers high-speed switching capabilities, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the STP4NK60ZFP:

  • STP4NK80ZFP: A similar N-channel Power MOSFET offering comparable performance characteristics.
  • IRF3205: This is a popular N-channel Power MOSFET from Infineon with similar specifications to the STP4NK60ZFP.
  • FQP30N06L: Another N-channel Power MOSFET option suitable for power management and switching applications.

STP4NK60ZFP

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP4NK60ZFP Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 120 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 4 A
Drain Current-Max (ID) 4 A Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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