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STP2NK100Z

Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube

Inventory:5,813

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Overview of STP2NK100Z

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP2NK100Z Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE ENERGY RATED Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V Drain Current-Max (Abs) (ID) 2 A
Drain Current-Max (ID) 1.85 A Drain-source On Resistance-Max 8.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 9 pF
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W Pulsed Drain Current-Max (IDM) 7.4 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 74 ns
Turn-on Time-Max (ton) 13.7 ns

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