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STP22NM60N

Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube

Quantity Unit Price(USD) Ext. Price
1 $1.611 $1.61
10 $1.390 $13.90
30 $1.270 $38.10
100 $1.132 $113.20
500 $1.071 $535.50
1000 $1.043 $1,043.00

Inventory:7,603

*The price is for reference only.
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Overview of STP22NM60N

The STP22NM60N is a N Channel Mosfet offering a high Drain Source Voltage (600V) and a Continuous Drain Current of 16A. With a TO-220 transistor mounting style, this Mosfet is designed for through hole installation. The Rds(On) Test Voltage is 10V, ensuring efficient performance. Additionally, the Gate Source Threshold Voltage Max is 3V, providing reliable control over the device. This product is RoHS compliant, meeting environmental standards set by regulatory bodies

Key Features

  • Fully tested for reliability
  • Low input capacitance and gate charge
  • Minimal gate input resistance

Application

  • Switching applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP22NM60N Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 16 A Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.22 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 64 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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