STP22NM60N
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.611 | $1.61 |
10 | $1.390 | $13.90 |
30 | $1.270 | $38.10 |
100 | $1.132 | $113.20 |
500 | $1.071 | $535.50 |
1000 | $1.043 | $1,043.00 |
Inventory:7,603
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Part Number : STP22NM60N
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Package/Case : TO-220
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STP22NM60N DataSheet (PDF)
Overview of STP22NM60N
The STP22NM60N is a N Channel Mosfet offering a high Drain Source Voltage (600V) and a Continuous Drain Current of 16A. With a TO-220 transistor mounting style, this Mosfet is designed for through hole installation. The Rds(On) Test Voltage is 10V, ensuring efficient performance. Additionally, the Gate Source Threshold Voltage Max is 3V, providing reliable control over the device. This product is RoHS compliant, meeting environmental standards set by regulatory bodies
Key Features
- Fully tested for reliability
- Low input capacitance and gate charge
- Minimal gate input resistance
Application
- Switching applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STP22NM60N | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 300 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (Abs) (ID) | 16 A | Drain Current-Max (ID) | 16 A |
Drain-source On Resistance-Max | 0.22 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 125 W |
Pulsed Drain Current-Max (IDM) | 64 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Warranty, Returns, and Additional Information
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Returns for Exchange: within 90 days
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