STP12NK80Z
Trans MOSFET N-CH 800V 10.5A 3-Pin(3+Tab) TO-220AB Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.677 | $2.68 |
10 | $2.316 | $23.16 |
50 | $2.093 | $104.65 |
100 | $1.862 | $186.20 |
500 | $1.758 | $879.00 |
1000 | $1.712 | $1,712.00 |
Inventory:8,258
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : STP12NK80Z
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Package/Case : TO-220
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STP12NK80Z DataSheet (PDF)
Overview of STP12NK80Z
The STP12NK80Z is a high voltage N-channel MOSFET transistor in a TO-220 package designed for various power supply and motor control applications. With a drain-source voltage rating of 800V and a continuous drain current of 10.5A, this MOSFET is capable of handling high power loads with efficiency. It features a low gate-source threshold voltage of up to 3.75V, allowing for easy triggering of the device. The Rds(on) test voltage of 10V ensures low on-state resistance for reduced power dissipation and improved thermal performance. With a power dissipation rating of 190W, the STP12NK80Z is suitable for high power applications where reliability and performance are paramount. This MOSFET is RoHS compliant, meeting environmental standards for hazardous materials, making it a sustainable choice for your electronic design needs
Key Features
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing reliability
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STP12NK80Z | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 50 Weeks | Date Of Intro | 1980-01-04 |
Samacsys Manufacturer | STMicroelectronics | Avalanche Energy Rating (Eas) | 400 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 800 V |
Drain Current-Max (Abs) (ID) | 10.5 A | Drain Current-Max (ID) | 10.5 A |
Drain-source On Resistance-Max | 0.75 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 190 W |
Pulsed Drain Current-Max (IDM) | 42 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | Matte Tin (Sn) |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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