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STP12NK80Z

Trans MOSFET N-CH 800V 10.5A 3-Pin(3+Tab) TO-220AB Tube

Quantity Unit Price(USD) Ext. Price
1 $2.677 $2.68
10 $2.316 $23.16
50 $2.093 $104.65
100 $1.862 $186.20
500 $1.758 $879.00
1000 $1.712 $1,712.00

Inventory:8,258

*The price is for reference only.
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Overview of STP12NK80Z

The STP12NK80Z is a high voltage N-channel MOSFET transistor in a TO-220 package designed for various power supply and motor control applications. With a drain-source voltage rating of 800V and a continuous drain current of 10.5A, this MOSFET is capable of handling high power loads with efficiency. It features a low gate-source threshold voltage of up to 3.75V, allowing for easy triggering of the device. The Rds(on) test voltage of 10V ensures low on-state resistance for reduced power dissipation and improved thermal performance. With a power dissipation rating of 190W, the STP12NK80Z is suitable for high power applications where reliability and performance are paramount. This MOSFET is RoHS compliant, meeting environmental standards for hazardous materials, making it a sustainable choice for your electronic design needs

Key Features

  • Extremely high dv/dt capability
  • Improved esd capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing reliability

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP12NK80Z Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 10.5 A Drain Current-Max (ID) 10.5 A
Drain-source On Resistance-Max 0.75 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 42 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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