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STH310N10F7-2

Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R

Quantity Unit Price(USD) Ext. Price
1 $3.410 $3.41
10 $3.025 $30.25
30 $2.795 $83.85
100 $2.562 $256.20
500 $2.455 $1,227.50
1000 $2.408 $2,408.00

Inventory:8,440

*The price is for reference only.
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Overview of STH310N10F7-2

The STH310N10F7-2 MOSFET is an N-Channel type transistor with a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 180A. Designed for surface mount applications, this MOSFET features a low on-state resistance (Rds(On)) test voltage of 10V, making it suitable for high-efficiency designs. With a maximum gate-source threshold voltage of 3.5V, this MOSFET offers low gate drive requirements, improving overall system performance. Additionally, the STH310N10F7-2 is RoHS compliant, ensuring its environmental safety and compliance with international regulations. Manufactured by STMicroelectronics, this MOSFET is a reliable and high-quality solution for a wide range of power management and conversion applications

Key Features

  • Rapid switching speed
  • Precise temperature control
  • Smooth electrical performance
  • Excellent ESD immunity

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series DeepGATE™, STripFET™ VII Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V
Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STH310

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

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