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STH13N120K5-2AG

Trans MOSFET N-CH 1.2KV 12A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R

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Overview of STH13N120K5-2AG

Revolutionize your power management systems with the STH13N120K5-2AG. This high voltage MOSFET offers a level of performance that is second to none, allowing for seamless integration into a wide range of applications. By leveraging its superior on-resistance and ultra-low gate charge, users can achieve new levels of power density and efficiency that were previously unattainable

Key Features

  • Robust and reliable functionality
  • Fault-tolerant performance ensured
  • Efficient power management realized
  • Advanced signal processing enabled

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 44.2 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 100 V Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package H2PAK-2 Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STH13

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