STGWT40H65DFB
IGBT Transistors 650V 40A HSpd trench gate field-stop IGB
Inventory:8,594
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Part Number : STGWT40H65DFB
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Package/Case : TO-3P
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Brand : ST
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Components Classification : Single IGBTs
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Datesheet : STGWT40H65DFB DataSheet (PDF)
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Series : STGWT40H65DFB
Overview of STGWT40H65DFB
The STGWT40H65DFB is a cutting-edge IGBT featuring a state-of-the-art trench gate field-stop structure, representing the pinnacle of technological innovation in the field. As part of the HB series of IGBTs, this device strikes the perfect balance between conduction and switching loss, guaranteeing unrivaled efficiency in any frequency converter application. Its positive VCE(sat)temperature coefficient and highly consistent parameter distribution make it an ideal choice for parallel operation, ensuring optimal performance and reliability
Key Features
- High current handling capacity
- Small thermal resistance
- Soft recovery diode characteristic
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | STGWT40H65DFB | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Package Description | , |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
| Collector Current-Max (IC) | 80 A | Collector-Emitter Voltage-Max | 650 V |
| Gate-Emitter Voltage-Max | 20 V | Operating Temperature-Max | 175 °C |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 283 W | Surface Mount | NO |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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