• packageimg
packageimg

STGWA60H65DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Inventory:6,462

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for STGWA60H65DFB using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STGWA60H65DFB

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • High precision and accuracy
  • Wide operating temperature range
  • Robust and durable construction
  • Advanced noise reduction technology
  • Safe and secure power supply

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGWA60H65DFB Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

FF100R12YT3

FF100R12YT3

Restricted to OEMs and CMs
IRFPG50PBF

IRFPG50PBF

N-channel MOSFET,IRFPG50 6.1A 1000V
TN5335K1-G

TN5335K1-G

Three-pin SOT-23 package N-channel MOSFET suitable for high power applications
SIRA99DP-T1-GE3

SIRA99DP-T1-GE3

MOSFET P-Channel 30 V (D-S) MOSFET
MTB23P06V

MTB23P06V

HIGH VOLTAGE CAPABLE 23A TRANSISTOR
SIS413DN-T1-GE3

SIS413DN-T1-GE3

MOSFET with P-channel, -30V source voltage, and continuous drain current of -18A
PSMN8R2-80YS,115

PSMN8R2-80YS,115

Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R
2SK2225-E

2SK2225-E

2SK2225-E MOSFET: High-Power Transistor with 2A Current and 1500V Voltage Rating, Lead-Free TO-3PFM Package
IXTQ36N30P

IXTQ36N30P

Compliance: ROHS
VMO1200-01F

VMO1200-01F

Featuring 100V maximum voltage rating and 12A continuous current capacity