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STGWA40IH65DF

Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube

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Overview of STGWA40IH65DF

Introducing our latest product, the STGWA40IH65DF - an IGBT 650 V soft-switching IH series that takes efficiency to the next level. With its advanced proprietary trench gate field-stop structure, this product is designed to optimize performance in both conduction and switching losses for soft commutation. It also includes a freewheeling diode with a low drop forward voltage, making it the perfect choice for resonant and soft-switching applications where maximizing efficiency is key

Key Features

  • Tight parameter tolerance
  • Low thermal resistance
  • Soft start-up current limiting
  • Overcurrent protection

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGWA40IH65DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics Case Connection COLLECTOR
Collector Current-Max (IC) 80 A Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 238 W Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON
Turn-off Time-Nom (toff) 263 ns VCEsat-Max 2 V

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