STGWA40HP65FB2
Trans IGBT Chip N-CH 650V 72A 227W 3-Pin(3+Tab) TO-247 Tube
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $3.832 | $3.83 |
| 10 | $3.651 | $36.51 |
| 30 | $3.243 | $97.29 |
| 100 | $3.133 | $313.30 |
| 600 | $3.082 | $1,849.20 |
| 1200 | $3.060 | $3,672.00 |
Inventory:6,603
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Part Number : STGWA40HP65FB2
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Package/Case : TO-247 Long Leads
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Brand : ST
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Components Classification : Single IGBTs
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Datesheet : STGWA40HP65FB2 DataSheet (PDF)
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Series : STGWA40HP65FB2
Overview of STGWA40HP65FB2
With the latest IGBT 650 V HB2 series, the STGWA40HP65FB2 introduces cutting-edge technology designed to enhance efficiency in various applications. Its superior conduction and reduced switching energy make it an ideal choice for demanding tasks, while the co-packaged diode ensures protection during operation. This product represents a significant evolution in the field of advanced trench gate field-stop structure technology, making it a valuable asset for industries seeking improved performance
Key Features
- Fast switching speed
- Low noise emission
- Wide operating range
Application
POWER CONTROLSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | STGWA40HP65FB2 | Part Life Cycle Code | Active |
| Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Samacsys Manufacturer | STMicroelectronics | Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 72 A | Collector-Emitter Voltage-Max | 650 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | Gate-Emitter Thr Voltage-Max | 7 V |
| Gate-Emitter Voltage-Max | 20 V | JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 230 W | Surface Mount | NO |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 189 ns |
| VCEsat-Max | 2 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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