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STGFW20V60DF

Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube

Quantity Unit Price(USD) Ext. Price
1 $2.489 $2.49
10 $2.177 $21.77
30 $1.981 $59.43
90 $1.780 $160.20
510 $1.691 $862.41
990 $1.650 $1,633.50

Inventory:7,998

*The price is for reference only.
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Submit your quote request for STGFW20V60DF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STGFW20V60DF

IGBT Trench Field Stop 600 V 40 A 52 W Through Hole TO-3PF

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGFW20V60DF Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Case Connection ISOLATED
Collector Current-Max (IC) 40 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 86.7 W
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 173 ns Turn-on Time-Nom (ton) 49 ns
VCEsat-Max 2.2 V

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