• STGD5H60DF DPAK
STGD5H60DF DPAK

STGD5H60DF

Trans IGBT Chip N-CH 600V 10A 83W 3-Pin(2+Tab) DPAK T/R

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Overview of STGD5H60DF

The STGD5H60DF is an advanced N-channel Power MOSFET designed for high power switching applications. It features a low on-state resistance and high switching speed, making it suitable for use in power supplies, motor control, and other power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STGD5H60DF MOSFET for a visual representation.

Key Features

  • High Power Switching: The STGD5H60DF is capable of handling high power levels, making it suitable for demanding applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power losses and improves efficiency in power electronics circuits.
  • Fast Switching Speed: The high switching speed of the STGD5H60DF allows for quick response times in switching applications.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation, ensuring stable operation under high power conditions.

Note: For detailed technical specifications, please refer to the STGD5H60DF datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits due to its high power handling capability and low on-state resistance.
  • Motor Control: Suitable for motor control applications where fast switching and high efficiency are required.
  • Power Inverters: Used in power inverter designs for converting DC power to AC power efficiently.

Functionality

The STGD5H60DF Power MOSFET enables efficient power switching in various applications, providing a reliable and high-performance solution for power electronics designs.

Usage Guide

  • Gate Drive: Apply the appropriate gate drive voltage to the G pin to control the switching operation of the MOSFET.
  • Load Connection: Connect the load to the Drain (D) and Source (S) pins of the MOSFET for power switching.
  • Heat Management: Ensure proper heat sinking and thermal management to maintain the MOSFET's temperature within safe limits.

Frequently Asked Questions

Q: What is the maximum power rating of the STGD5H60DF?
A: The STGD5H60DF can handle a maximum power dissipation of X watts under specified conditions.

Q: Is the STGD5H60DF suitable for high-frequency switching applications?
A: Yes, the STGD5H60DF features a fast switching speed, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the STGD5H60DF:

  • STP60NF06: An N-channel Power MOSFET from STMicroelectronics offering comparable performance characteristics.
  • IRF3205: This Power MOSFET from Infineon provides similar power handling capabilities and switching characteristics.

STGD5H60DF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGD5H60DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Additional Feature BULK: 1000
Case Connection COLLECTOR Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.9 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
Number of Elements 1 Number of Terminals 2
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 83 W
Surface Mount YES Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 280 ns Turn-on Time-Nom (ton) 39 ns
VCEsat-Max 1.95 V

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