STGD5H60DF
Trans IGBT Chip N-CH 600V 10A 83W 3-Pin(2+Tab) DPAK T/R
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Part Number : STGD5H60DF
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Package/Case : DPAK
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Brands : ST
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Components Categories : Single IGBTs
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Datesheet : STGD5H60DF DataSheet (PDF)
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Series : STGD5H60DF
The STGD5H60DF is an advanced N-channel Power MOSFET designed for high power switching applications. It features a low on-state resistance and high switching speed, making it suitable for use in power supplies, motor control, and other power electronics applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STGD5H60DF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STGD5H60DF datasheet. Functionality The STGD5H60DF Power MOSFET enables efficient power switching in various applications, providing a reliable and high-performance solution for power electronics designs. Usage Guide Q: What is the maximum power rating of the STGD5H60DF? Q: Is the STGD5H60DF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the STGD5H60DF:Overview of STGD5H60DF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The STGD5H60DF can handle a maximum power dissipation of X watts under specified conditions.
A: Yes, the STGD5H60DF features a fast switching speed, making it suitable for high-frequency switching applications.Equivalent
![STGD5H60DF STGD5H60DF](/files/uploads/product/b/ae1b2afc-97d7-4bf2-be68-08dbc6589f1f.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STGD5H60DF | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | STMicroelectronics | Additional Feature | BULK: 1000 |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 10 A |
Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Gate-Emitter Thr Voltage-Max | 6.9 V | Gate-Emitter Voltage-Max | 20 V |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 83 W |
Surface Mount | YES | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 280 ns | Turn-on Time-Nom (ton) | 39 ns |
VCEsat-Max | 1.95 V |
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