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STF7NM60N

Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.049 $1.05
10 $0.903 $9.03
30 $0.822 $24.66
100 $0.662 $66.20
500 $0.622 $311.00
1000 $0.604 $604.00

Inventory:4,253

*The price is for reference only.
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Overview of STF7NM60N

The STF7NM60N is a cutting-edge N-channel Power MOSFET that showcases the latest advancements in technology. Utilizing the innovative second generation of MDmesh™ technology, these devices offer superior performance compared to traditional Power MOSFETs. By incorporating a vertical structure into the strip layout, these MOSFETs achieve remarkably low on-resistance and gate charge values, making them ideal for high-efficiency converters that demand peak performance

Key Features

  • High-speed data transmission
  • Low power consumption
  • Compact physical design

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF7NM60N Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description TO-220FP, 3 PIN Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 119 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 5 A Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.9 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 20 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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