STF2N95K5
Trans MOSFET N-CH 950V 2A 3-Pin(3+Tab) TO-220FP Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.730 | $0.73 |
10 | $0.606 | $6.06 |
50 | $0.543 | $27.15 |
100 | $0.483 | $48.30 |
500 | $0.446 | $223.00 |
1000 | $0.425 | $425.00 |
Inventory:4,546
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Part Number : STF2N95K5
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Package/Case : TO-220FP
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STF2N95K5 DataSheet (PDF)
Overview of STF2N95K5
Product STF2N95K5 is a cutting-edge N-channel Zener-protected Power MOSFET that stands out in the market due to its innovative design utilizing ST’s SuperMESH™ 5 technology. This technology, known for its high voltage resilience and avalanche ruggedness, ensures superior performance and reliability in various applications. By incorporating a proprietary vertical structure, STF2N95K5 delivers a substantial decrease in on-resistance, translating to increased efficiency and power density. Furthermore, the ultra-low gate charge of this MOSFET makes it ideal for demanding tasks where superior energy management is key
Key Features
- Precision temperature sensing
- Fast response time
- High accuracy
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF2N95K5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 50 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 950 V |
Drain Current-Max (Abs) (ID) | 2 A | Drain Current-Max (ID) | 2 A |
Drain-source On Resistance-Max | 5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 20 W | Pulsed Drain Current-Max (IDM) | 8 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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