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STF21N65M5

MOSFET N-channel 650 V 0.175 17A MDmesh

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Overview of STF21N65M5

Product STF21N65M5 is a high-quality power field-effect transistor with a voltage rating of 650V, an on-state resistance of 0.175 ohms, and a current rating of 17A. This N-channel MDMESH V power MOSFET is designed for use in a wide range of power electronic applications, offering reliable and efficient performance

Key Features

  • Low noise figure and high gain bandwidth product
  • Fine control of bias voltage
  • Wide operating temperature range

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF21N65M5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 400 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 17 A Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.19 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 68 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 150 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 50 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 30 W Channel Mode Enhancement
Tradename MDmesh Series Mdmesh M5
Brand STMicroelectronics Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Unit Weight 0.068784 oz

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