STF19NM50N
Compact TO-P package with pin design for easy integration into electronic circuit
Inventory:4,133
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : STF19NM50N
-
Package/Case : TO-220FP
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : STF19NM50N DataSheet (PDF)
-
Series : STF19NM50N
Overview of STF19NM50N
As a pioneer in power MOSFET design, the STF19NM50N product series sets a new standard for efficiency and performance in the field of power electronics. Utilizing the latest MDmesh™ technology, these N-channel devices offer unmatched capabilities for high-efficiency converters and other demanding applications. The unique vertical structure and optimized strip layout of the MOSFETs result in exceptionally low on-resistance and gate charge, ensuring minimal power dissipation and maximum power output. With the STF19NM50N, engineers and designers can confidently tackle complex projects knowing they have a reliable and high-performance solution at their disposal
Key Features
- High surge withstand capability
- Low power consumption and standby mode
- Easy to handle and install
- Compact and reliable design
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF19NM50N | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 208 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 500 V |
Drain Current-Max (Abs) (ID) | 14 A | Drain Current-Max (ID) | 14 A |
Drain-source On Resistance-Max | 0.25 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 30 W |
Pulsed Drain Current-Max (IDM) | 56 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![STD150N3LLH6](/files/uploads/product/s/9ba83f28-d75d-4155-1bbb-08dbc6589f20.webp)
STD150N3LLH6
STripFET VI DeepGATE
![STFW4N150](/files/uploads/product/s/01ae0e25-ec41-48f2-65fc-08dbc6589f1f.webp)
STFW4N150
Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3PF Tube
![STGW60V60DF](/files/uploads/product/s/afa0513b54a54b9e868d0f6da6af06a4.webp)
STGW60V60DF
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
![STX0560](/files/uploads/product/s/713b21c32f4440dfbbb590b4bcabdf1d.webp)
STX0560
Fast-switching power transistor with high-voltage capability
![STP3N150](/files/uploads/product/s/581552bd-1bcd-4df5-e2a8-08dbc6589f1f.webp)
STP3N150
MOSFET 1500V 6Ohm 2.5A N-Channel
![STF13N60M2](/files/uploads/product/s/f9c962b1-23ee-49bc-1c9a-08dbc6589f1f.webp)
STF13N60M2
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
![STF24N60M2](/files/uploads/product/s/650a7fc1-7e0c-487c-f2c3-08dbc6589f1e.webp)
STF24N60M2
MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
![STP11NM80](/files/uploads/product/s/1c0398f6-b62e-4209-1d75-08dbbf1058de.webp)
STP11NM80
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh"
![ST13007DFP](/img/package/to-220f.jpg)
ST13007DFP
Bipolar Transistors - BJT
![STD30NF03LT4](/img/package/dpak.jpg)
STD30NF03LT4
MOSFET N-CH 30V 30A DPAK
![TK50J30D](/img/package/to3p.jpg)
TK50J30D
Transistor MOSFET
![IPD90P03P4L04ATMA1](/img/package/dpak.jpg)
IPD90P03P4L04ATMA1
Automotive Grade P-Channel MOSFET with 30V Voltage Rating and 90A Current Capability
![GA200SA60U](/img/package/sot.jpg)
GA200SA60U
Transistor GA200SA60U: Insulated Gate Bipolar Module
![IRF9Z34NSTRLPBF](/img/package/d2pak3.jpg)
IRF9Z34NSTRLPBF
D2PAK Package Power MOSFET with 3 Pins and 2 Tabs
![IRF8910TRPBF](/img/package/soic8.jpg)
IRF8910TRPBF
Transistor: N-MOSFET x2
![SI3404-TP](/img/package/sot23.jpg)
SI3404-TP
350mW power dissipation capability at 5.8A current
![MRF6V2150NBR1](/img/package/to3.jpg)
MRF6V2150NBR1
N-Channel RF MOSFET Transistor with 110V Voltage Rating and TO-272 Package, Packaged on Tape and Reel
![IXTK32P60P](/img/package/to264.jpg)
IXTK32P60P
Field-Effect Transistor for power applications
![STF25NM60N](/img/package/to220.jpg)
STF25NM60N
Features 3 pins with a tab for secure connection in circuit applications
![2SA1746](/img/package/to3pf.jpg)
2SA1746
Product 2SA1746 features a voltage rating of 50V and a power rating of 60W