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STF18N65M2

Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.861 $1.86
10 $1.619 $16.19
50 $1.467 $73.35
100 $1.312 $131.20
500 $1.242 $621.00
1200 $1.211 $1,453.20

Inventory:7,007

*The price is for reference only.
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Overview of STF18N65M2

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Application

Switching applications

LLC converters, resonant converters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF18N65M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Configuration SINGLE
Drain Current-Max (Abs) (ID) 12 A Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR Number of Elements 1
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 25 W
Surface Mount NO Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 275 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 20 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 25 W Channel Mode Enhancement
Tradename MDmesh Series STF18N65M2
Brand STMicroelectronics Fall Time 12.5 ns
Product Type MOSFET Rise Time 7.5 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 46 ns
Typical Turn-On Delay Time 11 ns Unit Weight 0.068784 oz

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