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STF13N95K3

Trans MOSFET N-CH 950V 10A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $4.915 $4.92
200 $1.903 $380.60
500 $1.835 $917.50
1000 $1.803 $1,803.00

Inventory:8,561

*The price is for reference only.
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Overview of STF13N95K3

STMicroelectronics' STF13N95K3 SuperMESH3™ Power MOSFETs epitomize the cutting-edge advancements in semiconductor technology. By leveraging the proven SuperMESH™ platform and implementing a refined vertical structure, these MOSFETs offer industry-leading on-resistance, dynamic performance, and avalanche capability. Their versatility makes them suitable for a wide range of demanding applications, from high-power industrial machinery to precision electronic systems, ensuring optimal performance and reliability in any scenario

Key Features

  • Low input capacitance and resistance
  • Rapid switching time and turn-off capability
  • Surface mount technology
  • Fully avalanche tested and Zener-protected
  • High surge current capability

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF13N95K3 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220FP, 3 PIN Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE Avalanche Energy Rating (Eas) 400 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 950 V Drain Current-Max (Abs) (ID) 10 A
Drain Current-Max (ID) 10 A Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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