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STF13N80K5

Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube

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Overview of STF13N80K5

The STF13N80K5 is a high-voltage N-channel MOSFET designed for use in a wide range of applications. With a maximum drain-source voltage of 800V and a continuous drain current of 12A, this MOSFET is capable of handling high power loads with ease. Its through-hole mounting style makes it easy to install in a variety of electronic devices, and its RoHS compliance ensures that it meets the latest environmental standards

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF13N80K5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description TO-220FP, 3 PIN
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 14 Weeks, 4 Days Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 148 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 12 A Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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