STF13N65M2
High-power switching device for DC/DC converters and motor control applicatio
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.729 | $0.73 |
10 | $0.607 | $6.07 |
30 | $0.547 | $16.41 |
100 | $0.486 | $48.60 |
500 | $0.450 | $225.00 |
1000 | $0.431 | $431.00 |
Inventory:8,097
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : STF13N65M2
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Package/Case : TO-220FP
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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Datesheet : STF13N65M2 DataSheet (PDF)
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Series : STF13N65M2
Overview of STF13N65M2
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Key Features
- High surge current handling capability
- Fully RoHS compliant
- Improved thermal resistance for efficient heat dissipation
- Silicon-protected for long lifespan
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF13N65M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 350 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 10 A | Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.43 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 25 W |
Pulsed Drain Current-Max (IDM) | 40 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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Payment
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If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
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