STF12N65M2
Robust and efficient power switching in automotive and industrial systems
Inventory:3,834
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : STF12N65M2
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Package/Case : TO-220FP
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STF12N65M2 DataSheet (PDF)
Overview of STF12N65M2
The STF12N65M2 is an N-channel Power MOSFET that is designed to deliver high performance in demanding applications. Utilizing MDmesh™ M2 technology, this device is optimized for low on-resistance and efficient switching, making it an ideal choice for high efficiency converters. The strip layout and improved vertical structure further enhance its capabilities, ensuring reliable and consistent operation in various power management systems
Key Features
- Sustainable energy harvesting
- Smart sensing and actuation
- Advanced user interface design
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF12N65M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 250 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 8 A | Drain Current-Max (ID) | 8 A |
Drain-source On Resistance-Max | 0.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 25 W | Pulsed Drain Current-Max (IDM) | 32 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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