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STF12N65M2

Robust and efficient power switching in automotive and industrial systems

Inventory:3,834

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

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Submit your quote request for STF12N65M2 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STF12N65M2

The STF12N65M2 is an N-channel Power MOSFET that is designed to deliver high performance in demanding applications. Utilizing MDmesh™ M2 technology, this device is optimized for low on-resistance and efficient switching, making it an ideal choice for high efficiency converters. The strip layout and improved vertical structure further enhance its capabilities, ensuring reliable and consistent operation in various power management systems

Key Features

  • Sustainable energy harvesting
  • Smart sensing and actuation
  • Advanced user interface design

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF12N65M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description TO-220FP, 3 PIN
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 250 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 8 A Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W Pulsed Drain Current-Max (IDM) 32 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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