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STF11NM80

Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $2.203 $2.20
10 $1.888 $18.88
30 $1.690 $50.70
100 $1.488 $148.80
500 $1.396 $698.00
1000 $1.356 $1,356.00

Inventory:5,726

*The price is for reference only.
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Overview of STF11NM80

Engineers and designers can rely on the STF11NM80 to meet the highest standards for power efficiency and performance in their designs. The innovative MDmesh™ technology and PowerMESH™ horizontal layout make these MOSFETs a valuable asset for any power management system

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF11NM80 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE Avalanche Energy Rating (Eas) 400 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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